| Topic: |
Science > Physics |
| User: |
"" |
| Date: |
02 Sep 2006 08:01:44 AM |
| Object: |
A MU Metal Slab Interior Placed Transistor |
A set T.
And here the unit is to be a real thing. Except it is rather odd.
Slightly, brush a magentic field as a time change, except effect only
to its surface. A normal thing is to move the field to change its time.
Except now the technology to only brush its surface is available.
A sdrew.
A new word is given for the device to surface effect magnetic fields. A
magnetic plate of mu metal is taken, and place near the field!
Making Sdrew metal.
The problem with special magnetic field induction is understanding the
exact theory of Sdrew.
A time change effects and the induced field negates in the field
direction of the surface normal. A metal field then negates to shield.
Offerring true shielding as long as the direction of the original field
is normal.
A Sdrew tests the ability of the user in magnetic field theory. How
does the metal act?
So the next best thing to negated field was its local counterpart the
time brushed field, they are equivalent. Inside the metal a time
surface is introduced. And the implication is the inverted time
transistor.
Take a sheet of mu metal and shield do magnetic shielding with it.
Now, inside the metal place this special transistor
**************|******************
::::::
*****************|**************
The vertical bars are the contacts and the dots are the silicon.
Insulate the contact bars with a little silicon.
Now inverted time symmetry allows this device to function for real.
Interior transistors are a new thing invented and disclosed for the
first time here.
A silicon occlusion in the metal will time state. A "distime" field as
the silicon is charged. And to turn on the signal the exterior magnetic
field is required.
******************Making the voltage on the interior bar different from
the exterior bar.************
And this is a kind of transistor where the state of the input is
transformed.
An implication is the time called "distime" where the effect of
interior bruching is utilized to cause voltage. An energy change of the
electron causes the voltage change. Allowing all sorts of interior
accelerative effects.
And so T is a set introduced. A S-transistor is invented where only
energy change causes the voltage change. Ha ha
.
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