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(Andrew) wrote in message news:<ce784294.0405011234.5037bd30@posting.google.com>...
And now it seems to me a revolutionary step in FETs!!!
...K. Ueno et al. report about fabrication of an n-channel
accumulation-type field-effect transistor utilizing a KTaO3 single
crystal as an active element and a sputtered amorphous Al2O3 film as a
gate insulator....
Full story read here http://www.physorg.com/news61.htm
What"d you say?
Quoting your reference, "only a small number of perovskite FETs with
relatively low mobilities have been reported so far." With time, I'm
sure
the perovskite FETs with high mobilities will become abundant. It's an
exciting new technology!
Larry
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